| PART |
Description |
Maker |
| 91716-7001 91716-0530 91716-3008 91716-1515 91716- |
2.5 APPLI-M 17CKT OP/EW WO/POL 17 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 4Ckt Op/Ew WO/Pol 4 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 9CKT OP/EW WO/POL VD2 5 8GRN 9 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 6CKT OP/EW W/POL 2&3 6 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
RAST 2.5 APPLI-M 3CKT OP/EW WO/POL 3 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 6Ckt Op/Ew WO/Pol 6 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 5CKT OP/EW WO/POL 5 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 APPLI-M 19CKT OP/EW WO/POL 19 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
2.5 Appli-M 5Ckt Op/Ew W/Pol 3/4
|
Bourns, Inc.
Molex, Inc.
MOLEX INC
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices
solid state crowbar devices
|
TECCOR [Teccor Electronics]
TECCOR[Teccor Electronics]
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| LVR008S |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| MICROSMD175F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TS250-130F-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TSM600-250F |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
|
